美国桑迪亚国家实验室辐射响应研究博士后招聘

Job Description

Are you looking to join a dynamic team? We are seeking a Postdoctoral Appointee to research responses of semiconductors to radiation sources. In this role, you will use a suite of tools including electrical response (gain, photocurrent, reverse leakage, etc.) in conjunction with in-situ deep level transient spectroscopy (DLTS), photoluminescence (PL), electroluminescence (EL), transient microwave reflectance (TMR), electron and ion beam induced charge collection (EBIC and IBIC), etc. to understand defect production and evolution at short-times. In addition, you will partner with a multidisciplinary team including internal and external collaborators. On any given day, you may be called on to: + Support research programs utilizing the capabilities of the Ion Beam Laboratory related to understanding and modeling the radiation response of semiconductor materials and devices. These include the following: + In-situ low temperature characterization using DLTS for defect spectroscopy + In-situ PL, EL and TMR setups to measure minority carrier lifetimes + EBIC and IBIC mapping exploring transient single event upsets in CMOS devices + A unique mixed radiation environment simulator combining ion and electron irradiations simulating both displacement damage and high dose rate conditions + Support the creation of new capabilities that improve opportunities for high-quality research, particularly developing new techniques to explore and understand defect physics + Collaborate with diverse groups working with a wide array of material deposition techniques, predictive modeling, device fabrication, material testing, and range of other capabilities + Augment the body of knowledge through publication of research results and presenting at technical conferences

Required:

+ Have, or are pursuing, a PhD in Electrical Engineering, Physics, Materials Science, or related discipline, and possess a bachelor's in science, technology, engineering or mathematics (STEM) + Research background in semiconductor materials or devices + Good communication skills as evidenced by a history of publication of results in peer-reviewed journals and external presentations at appropriate scientific conferences + Able to obtain and maintain a DOE Q-level security clearance

Desired:

+ Experience with defects in semiconductors, semiconductor device physics, and/or TCAD modeling of devices + Experience using ion beams (100keV – multi-MeV) for materials analysis or modification

Department Description:

The Radiation-Solid Interaction Department operates the Ion Beam Laboratory at Sandia National Laboratories, which has been a key player in understanding radiation effects in microelectronics since the 1950’s and more recently understanding the materials science of defects in solids. These efforts continue to this day with development of in situ surrogate testing capabilities to experimentally determine early-time response of microelectronic devices to neutron and gamma environments. This experimental data, coupled with fundamental physics-based defect and carrier models, allows us to predict the radiation response of devices and circuits. Our focused ion beam implantation capabilities allow us to explore the fundamental materials science of novel defects in solids down to the fabrication of single atom devices. Over the last decade, Sandia has improved the understanding of silicon and III-V materials. In the coming years, we need to apply our experiment and modeling expertise to the next generation of Sandia’s radiation-hardened CMOS technologies, maturing materials such as III-nitrides, as well as rapidly emerging materials (e.g. gallium oxide). We offer one of a kind experimental and modeling capabilities, a wide range of technologies of interest, and a strong multi-disciplinary team. Recently, Sandia has influenced the field of solid state defect centers and single atom doping by enabling the deterministic creation of single atom devices within nanostructures including optical cavities for improved photon coupling in wide bandgap materials and electrical structures for low temperature quantum transport studies in Si MOSFET devices. Our state-of-the-art facility houses 4 major accelerators: a 6 MV Tandem, a 3 MV Pelletron, a 400 kV implanter, and a unique 100 kV nanoImplanter with a 10 nm spot size. Other experimental facilities include micro beam lines on all the major accelerators with spots sizes from 150 nm to 1 um for localized irradiations. Electrical characterization of ion beam induced damage including in-situ deep level transient spectroscopy for defect spectroscopy, in-situ photoluminescence and transient microwave reflectance setups to measure minority carrier lifetimes and a unique mixed radiation environment simulator combining ion and electron irradiations simulating both displacement damage and high dose rate conditions. Optical characterization of light emission from optically active defect centers in diamond, GaN, SiC, etc. using photoluminescence and electroluminescence. The Ion Beam Laboratory is actively engaged in three major research thrusts: + Understanding the performance of materials in radiation environments. Among these projects we directly impact the performance of microelectronics in space and other hostile environments. + Developing and applying novel ion beam techniques to accurately measure materials compositions. Applications in this area include mapping hydrogen isotopes in fusion wall material and measuring the composition of thin complex materials such as transition metal oxides. + Exploring the materials science of defects in solids. This broad area includes single ion implants for quantum applications in wide bandgap materials, anomalous grain growth in nanograined materials, hydride formation under irradiation, and nanomechanical responses of materials. In each thrust the department provides outstanding capabilities to multidisciplinary teams with an interest in publishing high quality research and applying the results to problems of national interest.

About Sandia:

Sandia National Laboratories is the nation’s premier science and engineering lab for national security and technology innovation, with teams of specialists focused on cutting-edge work in a broad array of areas. Some of the main reasons we love our jobs: + Challenging work withamazingimpact that contributes to security, peace, and freedom worldwide + Extraordinary co-workers + Some of the best tools, equipment, and research facilities in the world + Career advancement and enrichment opportunities + Flexible schedules, generous vacations,strongmedical and other benefits, competitive 401k, learning opportunities, relocation assistance and amenities aimed at creating a solid work/life balance* _World-changing technologies. Life-changing careers._ Learn more about Sandia at: http://www.sandia.gov *These benefits vary by job classification.

Security Clearance:

Sandia is required by DOE to conduct a pre-employment drug test and background review that includes checks of personal references, credit, law enforcement records, and employment/education verifications. Applicants for employment need to be able to obtain and maintain a DOE Q-level security clearance, which requires U.S. citizenship. If you hold more than one citizenship (i.e., of the U.S. and another country), your ability to obtain a security clearance may be impacted. Applicants offered employment with Sandia are subject to a federal background investigation to meet the requirements for access to classified information or matter if the duties of the position require a DOE security clearance. Substance abuse or illegal drug use, falsification of information, criminal activity, serious misconduct or other indicators of untrustworthiness can cause a clearance to be denied or terminated by DOE, resulting in the inability to perform the duties assigned and subsequent termination of employment.